(China (Mainland))
Product Summary
The JS28F320C3BD70 provides high-performance asynchronous reads in packagecompatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the device’s memory map. The rest of the memory array is grouped into 32 Kword main blocks.
Parametrics
JS28F320C3BD70 absolute maximum ratings: (1)Extended Operating Temperature During Read: - 40 ℃ to +85 ℃; (2)During Block Erase and Program: –40 ℃ to +85 ℃; (3)Temperature under Bias: –40 ℃ to +85 ℃; (4)Storage Temperature: –65 ℃ to +125 ℃; (5)Voltage On Any Pin (except VCC and VPP) with Respect to GND: –0.5 V to +3.7 V; (6)VPP Voltage (for Block Erase and Program) with Respect to GND: –0.5 V to +13.5 V; (7)VCC and VCCQ Supply Voltage with Respect to GND: –0.2 V to +3.6 V; (8)Output Short Circuit Current: 100 mA.
Features
JS28F320C3BD70 features: (1)Flexible SmartVoltage Technology: 2.7 V-3.6 V read/program/erase; 12 V for fast production programming; (2)1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option: Reduces overall system power; (3)High Performance: 2.7 V– 3.6 V: 70 ns max access time; (4)ETOX VIII (0.13 μm) Flash Technology: 8, 16, 32 Mbit; (5)ETOX VII (0.18 μm) Flash Technology: 16, 32 Mbit; (6)ETOX. VI (0.25 μm) Flash Technology: 8, 16 and 32 Mbit.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 JS28F320C3BD70 |
Numonyx/Intel |
IC FLASH MEM 3V 32MBIT 48-TSOP |
Data Sheet |
|
|
||||||||||||||||
 |
JS28F320C3BD70A |
|
IC FLASH 32MBIT 70NS 48TSOP |
Data Sheet |
Negotiable |
|
||||||||||||||||
