AM29LV160DT-90EI

Product Summary

The AM29LV160DT-90EI is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide(x8) data appears on DQ7–DQ0. The AM29LV160DT-90EI is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable(OE#) controls. The AM29LV160DT-90EI requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

Parametrics

AM29LV160DT-90EI absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground, VCC: –0.5 V to +4.0 V; (4)A9, OE#, and RESET#: –0.5 V to +12.5 V; (5)All other pins: –0.5 V to VCC+0.5 V; (6)Output Short Circuit Current: 200 mA.

Features

AM29LV160DT-90EI features: (1)Single power supply operation; (2)Manufactured on 0.23 μm process technology; (3)Access times as fast as 70 ns; (4)Ultra low power consumption (typical values at 5 MHz); (5)Flexible sector architecture; (6)Unlock Bypass Program Command; (7)Top or bottom boot block configurations available; (8)Minimum 1,000,000 write cycle guarantee per sector; (9)20-year data retention at 125℃; (10)Compatibility with JEDEC standards; (11)Provides a hardware method of detecting; (12)program or erase cycle completion (not available on 44-pin SO); (13)Hardware method to reset the device to reading array data.

Diagrams