FQD11P06TM

power field effect transistor, TO-252, -60 V, Fast switching, Improved dv/dt capability

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Price:: US $0.20~0.30 / piece [Get Latest Price]

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PartNumber:: FQD11P06TM

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 10+

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Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-08-03

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Part Number:FQD11P06TM
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Product Summary

The FQD11P06TM P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. The FQD11P06TM is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parametrics

FQD11P06TM absolute maximum ratings: (1)Drain-Source Voltage: -60 V; (2)Drain Current: Continuous (TC = 25℃): -9.4 A, Continuous (TC = 100℃): -5.95 A; (3)Drain Current - Pulsed: -37.6 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 160 mJ; (6)Avalanche Current: -9.4 A; (7)Repetitive Avalanche Energy: 3.8 mJ; (8)Peak Diode Recovery dv/dt: -7.0 V/ns; (9)Power Dissipation (TA = 25℃): 2.5 W; (10)Power Dissipation (TC = 25℃): 38 W, Derate above 25℃: 0.3 W/℃; (11)Operating and Storage Temperature Range: -55 to +150 ℃.

Features

FQD11P06TM features: (1)-9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V; (2)Low gate charge ( typical 13 nC); (3)Low Crss ( typical 45 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.