(China (Mainland))
Product Summary
The K4D263238K-UC40 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Parametrics
K4D263238K-UC40 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.5 to 3.6 V; (2)Voltage on VDD supply relative to Vss VDD: -1.0 to 3.6 V; (3)Voltage on VDD supply relative to Vss VDDQ: -0.5 to 3.6 V; (4)Storage temperature TSTG: -55 to +150 ℃; (5)Power dissipation PD: 1.8 W; (6)Short circuit current IOS: 50 mA.
Features
K4D263238K-UC40 features: (1)2.5V 5% power supply for device operation; (2)2.5V 5% power supply for I/O interface; (3)SSTL_2 compatible inputs/outputs; (4)4 banks operation; (5)Full page burst length for sequential burst type only; (6)Start address of the full page burst should be even; (7)All inputs except data & DM are sampled at the positive going edge of the system clock; (8)Differential clock input; (9)Write Interrupted by Read function; (10)Data I/O transactions on both edges of Data strobe; (11)DLL aligns DQ and DQS transitions with Clock transition; (12)Edge aligned data & data strobe output; (13)Center aligned data & data strobe input; (14)DM for write masking only; (15)Auto & Self refresh; (16)32ms refresh period (4K cycle); (17)100pin TQFP package; (18)Maximum clock frequency up to 250MHz; (19)Maximum data rate up to 500Mbps/pin.
Diagrams
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K4D263238A-GC |
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K4D263238A-GC33 |
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K4D263238E-GC33 |
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